PTFA092213FL Datasheet | Infineon

PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092213EL Package H-33288-6 PTFA092213FL Package H-34288-4/2 VDD = 30 V, IDQ = 1850 m A, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing, 3.84 MHz Bandwidth 40 30 20 10 0 -10 -20 -30 30 -20 Two-carrier WCDMA Performance Features - Broadband internal matching - Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 d B - Efficiency = 29% - Intermodulation distortion = - 32 d Bc - Adjacent channel power = - 42.5 d Bc - Typical CW performance, 960 MHz, 30 V - Output power at P1d B = 250 W - Linear Gain = 17.5 d B - Efficiency = 52% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability, low HCI drift - Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power - Pb-free, Ro HS-pliant Gain (d B) , Drain Efficiency (%) Gain Efficiency IMD_lower...