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PTFA092213FL Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA092213FL datasheet preview

Datasheet Details

Part number PTFA092213FL
Datasheet PTFA092213FL PTFA092213EL Datasheet (PDF)
File Size 602.73 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213FL page 2 PTFA092213FL page 3

PTFA092213FL Overview

The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band.

PTFA092213FL Key Features

  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 960 MHz, 30 V
  • Average output power = 50 W
  • Linear Gain = 17.5 dB
  • Efficiency = 29%
  • Intermodulation distortion = -32 dBc
  • Adjacent channel power = -42.5 dBc
  • Typical CW performance, 960 MHz, 30 V
  • Output power at P1dB = 250 W
  • Linear Gain = 17.5 dB
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More Datasheets from Infineon

See all Infineon datasheets

Part Number Description
PTFA092213EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA092213FL Distributor

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