Datasheet4U Logo Datasheet4U.com

PTFA092211EL - Thermally-Enhanced High Power RF LDMOS FETs

Datasheet Summary

Description

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =.
  • 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P.
  • 1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output p.

📥 Download Datasheet

Datasheet preview – PTFA092211EL

Datasheet Details

Part number PTFA092211EL
Manufacturer Infineon
File Size 442.53 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA092211EL Datasheet
Additional preview pages of the PTFA092211EL datasheet.

📁 Similar Datasheet

  • PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
Other Datasheets by Infineon
  • PTFA092211FL - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092213EL - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092213FL - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092201E - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA092201F - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091201E - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091201F - Thermally-Enhanced High Power RF LDMOS FETs
  • PTFA091201GL - Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

Click to expand full text
PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA signal, PAR = 6.5 dB, 5 MHz carrier spacing 40 35 -20 -25 Features • • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.
Published: |