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PTFA092211EL Datasheet

Manufacturer: Infineon
PTFA092211EL datasheet preview

Datasheet Details

Part number PTFA092211EL
Datasheet PTFA092211EL_Infineon.pdf
File Size 442.53 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL page 2 PTFA092211EL page 3

PTFA092211EL Overview

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092211EL Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V
  • Average output power = 50 W
  • Linear Gain = 18.0 dB
  • Efficiency = 30%
  • Intermodulation distortion = -37 dBc Typical CW performance, 940 MHz, 30 V
  • Output power at P-1dB = 250 W
  • Gain = 17.0 dB
  • Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • Efficiency
  • 35 -40
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