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PTFA092213EL - Thermally-Enhanced High Power RF LDMOS FETs

Datasheet Summary

Description

The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band.

These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges.

Features

  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion =.
  • 32 dBc - Adjacent channel power =.
  • 42.5 dBc.
  • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).
  • Excellent thermal stab.

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Datasheet Details

Part number PTFA092213EL
Manufacturer Infineon
File Size 602.73 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA092213EL Datasheet
Additional preview pages of the PTFA092213EL datasheet.

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Full PDF Text Transcription

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PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature internal I/O matching and thermally-enhanced open-cavity ceramic packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092213EL Package H-33288-6 PTFA092213FL Package H-34288-4/2 VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 3.
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