PTFA260451E
PTFA260451E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS ® FET intended for CDMA2000, Super3G (3GPP TSG RAN), and Wi MAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA260451E Package H-30265-2
Drain Efficiency (%) Adj. Ch. Power Ratio (d Bc)
3-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 500 m A, ƒ = 2680 MHz
60 -40
50 Alt_1 2.5 MHz
40 Adj 2.135 MHz
-45 -50 -55
20 -60 10 Efficiency -65
0 -70 25 30 35 40 45 50
Output Power, Avg. (d Bm)
Features
- Lead-free, Ro HS-pliant and thermallyenhanced packaging
- Internal matching for wideband performance
- Typical three-carrier CDMA2000 performance
- Average output power = 10 W
- Gain = 14 d B
- Efficiency = 24%
- ACPR =
- 52 d Bc
- Typical CW performance
- Output power at P- 1d B = 50 W
- Efficiency = 46%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Excellent thermal stability
- Low HCI Drift
- Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
RF Performance
CDMA Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 m A, POUT = 10 W AVG, ƒ = 2680 MHz
Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency
Symbol Min Typ
ACPR
- - 45
Gps
- 14
ηD
-...
