• Part: PTFA260851F
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 387.34 KB
Download PTFA260851F Datasheet PDF
Infineon
PTFA260851F
PTFA260851F is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
- Part of the PTFA260851E comparator family.
Description The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for Wi MAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency (%) EVM (d Bc) Wi MAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 m A 25 -20 GHz 2.68 -25 GHz Efficiency 15 2.62 -30 10 -35 EVM 5 -40 0 -45 15 20 25 30 35 40 45 Output Power (d Bm) Features - Thermally-enhanced, Pb-free and Ro HS-pliant packages - Broadband internal matching - Typical Wi MAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 d B - Efficiency = 22% - Error Vector Magnitude = - 29 d B - Typical CW performance, 2680 MHz, 28 V - Output power at P- 1d B = 100 W - Efficiency = 47% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability, low HCI drift - Capable of handling 10:1 VSWR @ 28 V, 85 W (CW) output power RF Characteristics Wi MAX Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 m A, POUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz Characteristic Gain Drain Efficiency Error Vector Magnitude Symbol Min...