PTFA260851F
PTFA260851F is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
- Part of the PTFA260851E comparator family.
- Part of the PTFA260851E comparator family.
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for Wi MAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA260851E Package H-30248-2
PTFA260851F Package H-31248-2
Efficiency (%) EVM (d Bc)
Wi MAX EVM and Efficiency vs. Output Power
VDS = 28 V, IDQ = 900 m A
25 -20
GHz 2.68
-25
GHz
Efficiency
15 2.62
-30
10 -35 EVM
5 -40
0 -45 15 20 25 30 35 40 45
Output Power (d Bm)
Features
- Thermally-enhanced, Pb-free and Ro HS-pliant packages
- Broadband internal matching
- Typical Wi MAX performance at 2680 MHz, 28 V
- Average output power = 16 W
- Linear Gain = 14 d B
- Efficiency = 22%
- Error Vector Magnitude =
- 29 d B
- Typical CW performance, 2680 MHz, 28 V
- Output power at P- 1d B = 100 W
- Efficiency = 47%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V, 85 W (CW) output power
RF Characteristics
Wi MAX Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 m A, POUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic Gain Drain Efficiency Error Vector Magnitude
Symbol Min...