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PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFB090901FA datasheet PDF. This datasheet also covers the PTFB090901EA variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB090901EA-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB090901FA
Manufacturer Infineon
File Size 223.44 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB090901FA Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.
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