PTFB090901FA
PTFB090901FA is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
- Part of the PTFB090901EA comparator family.
- Part of the PTFB090901EA comparator family.
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB090901EA Package H-36265-2
PTFB090901FA Package H-37265-2
PTFB090901EA PTFB090901FA
Gain (d B) Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 m A, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing, BW = 3.84 MHz
23 60
Gain 21
50 40
20 30
19 20
Efficiency 18 10
17 b090901 gr 1
31 33 35 37 39 41 43 45 47 49
Output Power, Avg. (d Bm)
Features
- Input and output internal matching
- Typical CW performance, 960 MHz, 28 V
- Output power at P1d B = 90 W
- Efficiency = 65%
- Typical two-carrier WCDMA performance, 960 MHz, 28 V
- Average output power = 20 W
- Linear Gain = 20.8 d B
- Efficiency = 35%
- Intermodulation distortion =
- 35 d Bc
- Integrated ESD protection
- Low thermal resistance
- Pb-free and Ro HS-pliant
- Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 650 m A, POUT = 25 W average, ƒ = 960 MHz 3GPP signal, PAR = 10 d B @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz
Characteristic
Symbol
Min...
