• Part: PTFB211501E
  • Description: Thermally-Enhanced High Power RF LDMOS FETs
  • Manufacturer: Infineon
  • Size: 349.42 KB
PTFB211501E Datasheet (PDF) Download
Infineon
PTFB211501E

Description

The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.

Key Features

  • Broadband internal matching
  • Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjac