PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs

This page provides the datasheet information for the PTFB211501F, a member of the PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs family.

Product Overview

Infineon

Part number	PTFB211501F
Manufacturer	Infineon
File Size	349.42 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB211501F Datasheet
Additional preview pages of the PTFB211501F datasheet.

The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110

2170 frequency band.

include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -25 60 -30 50 -35 Efficiency 40 -40 30 -45 ACP Low 20 -50 10 ACP Up -55 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) Features.
Broadband internal matching.

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Published: Nov 27, 2016 |