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Infineon
Infineon

PTFB211503EL Datasheet Preview

PTFB211503EL Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

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PTFB211503EL pdf
PTFB211503EL
PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 to 2170 frequency band. Features
include I/O matching, high gain, and thermally-enhanced ceramic
open-cavity packages with slotted and earless flanges.Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB211503EL
H-33288-6
PTFB211503FL
H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30 30
Efficiency
-35 25
-40 20
-45
IMD Up
ACPR 15
-50
IMD Low
10
-55 5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance at 2170
MHz, 30 V
- Average output power = 32 W
- Linear Gain = 18 dB
- Efficiency = 29%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
amplifiers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 18 — dB
— 29
%
Adjacent Channel Power Ratio
ACPR — –36 — dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 04.1, 2016-06-14



Infineon
Infineon

PTFB211503EL Datasheet Preview

PTFB211503EL Datasheet

Thermally-Enhanced High Power RF LDMOS FETs

No Preview Available !

PTFB211503EL pdf
PTFB211503EL
PTFB211503FL
RF Characteristics (cont.)
Two-tone Measurement (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Gain
Gps
16.5
Drain Efficiency
hD 39
Intermodulation Distortion
IMD
Typ
18
40
–30
Max
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.2 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
1.6
Typ
0.08
2.1
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 150 W CW)
Symbol
VDSS
VGS
TJ
TSTG
RqJC
Value
65
–6 to +10
200
–40 to +150
0.27
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB211503EL V1 R0
PTFB211503EL V1 R250
PTFB211503FL V2 R0
PTFB211503FL V2 R250
Order Code
Package Description
PTFB211503ELV1R0XTMA1 H-33288-6, bolt-down
PTFB211503ELV1R250XTMA1 H-33288-6, bolt-down
PTFB211503FLV2R0XTMA1 H-34288-4/2, earless flange
PTFB211503FLV2R250XTMA1 H-34288-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 04.1, 2016-06-14


Part Number PTFB211503EL
Description Thermally-Enhanced High Power RF LDMOS FETs
Maker Infineon
Total Page 14 Pages
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