PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs

This page provides the datasheet information for the PTFB211503FL, a member of the PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs family.

Product Overview

Infineon

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Datasheet Details

Part number	PTFB211503FL
Manufacturer	Infineon
File Size	457.97 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB211503FL Datasheet
Additional preview pages of the PTFB211503FL datasheet.

PTFB211503FL Product details

Description

The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.

Features

include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 30 Efficiency -35 25.

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Other Datasheets by Infineon

PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs

Published: Nov 27, 2016 |