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PTFB211503FL

Manufacturer: Infineon

PTFB211503FL datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFB211503FL datasheet preview

PTFB211503FL Datasheet Details

Part number PTFB211503FL
Datasheet PTFB211503FL PTFB211503EL Datasheet (PDF)
File Size 457.97 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503FL page 2 PTFB211503FL page 3

PTFB211503FL Overview

The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.

PTFB211503FL Key Features

  • 30 30 Efficiency
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
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More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET
PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET
PTFB213004F High Power RF LDMOS Field Effect Transistor

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