Datasheet4U Logo Datasheet4U.com

BSC205N10LSG - Power-Transistor

Key Features

  • N-channel, logic level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Full PDF Text Transcription for BSC205N10LSG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC205N10LSG. For precise diagrams, and layout, please refer to the original PDF.

BSC205N10LS G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C ope...

View more extracted text
R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A www.DataSheet4U.

More Datasheets from Infineon

Part Number Description
BSC200P03LSG Power-Transistor
BSC252N10NSFG Power-Transistor
BSC265N10LSFG Power-Transistor
BSC014N06NS Power-Transistor
BSC016N03LSG Power-Transistor
BSC016N04LSG MOSFET
BSC017N04NSG Power-Transistor
BSC019N02KSG Power-Transistor
BSC019N04NSG 40V MOSFET
BSC020N03LSG MOSFET