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BSC252N10NSFG - Power-Transistor

Key Features

  • Very low gate charge for high frequency.

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Full PDF Text Transcription for BSC252N10NSFG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC252N10NSFG. For precise diagrams, and layout, please refer to the original PDF.

BSC252N10NSF G OptiMOS™2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Exc...

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tions • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.2 40 V mΩ A www.DataSheet4U.

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