BSC205N10LSG Datasheet | Infineon

BSC205N10LS G OptiMOS™2 Power-Transistor Features - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 150 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A .. - Ideal for high-frequency switching and synchronous rectification - Halogen-free according to IEC61249-2-21 Type BSC205N10LS G Package PG-TDSON-8 Marking 205N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50...