BSC205N10LSG - Power-Transistor

Datasheet Summary

Features

N-channel, logic level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
150 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	BSC205N10LSG
Manufacturer	Infineon Technologies
File Size	447.54 KB
Description	Power-Transistor
Datasheet	BSC205N10LSG Datasheet
Additional preview pages of the BSC205N10LSG datasheet.

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Full PDF Text Transcription

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BSC205N10LS G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A www.DataSheet4U.

Published: Jun 7, 2011 |