Datasheet4U Logo Datasheet4U.com

BSC205N10LSG - Power-Transistor

Key Features

  • N-channel, logic level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC21-4817 BSC21-4817 ETC
BSC22-0106D BSC22-0106D ETC
BSC22-0136 BSC22-0136 ETC
BSC22-01N40G1 BSC22-01N40G1 ETC
BSC22-2314W BSC22-2314W ETC

Other Datasheets by Infineon

Part Number Description
BSC200P03LSG Power-Transistor
BSC252N10NSFG Power-Transistor
BSC265N10LSFG Power-Transistor
BSC014N06NS Power-Transistor
BSC016N03LSG Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC205N10LS G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A www.DataSheet4U.