BSC205N10LSG Description
BSC205N10LS G OptiMOS™2 Power-Transistor.
BSC205N10LSG Key Features
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
- case R thJC bottom top Thermal resistance, junction
- ambient R thJA minimal footprint 6 cm2 cooling area 2) 1.6 18 62 50 K/W Values typ. max. Unit