The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Preliminary data
BSO 315 C
SIPMOS ® Small-Signal-Transistor
Features • Dual N- and P -Channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
N
P -30 0.25 -2.3 V Ω A
VDS RDS(on) ID
30 0.11 3.4
Enhancement mode
• Logic Level • Avalanche rated • dv/dt rated
Type BSO 315 C
Package SO 8
Ordering Code Q67041-S4014
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol N Continuous drain current
Value P
Unit A
ID
3.4 2.7 -2.3 -1.8 -7.2
T A = 25 °C T A = 70 °C
Pulsed drain current
I D puls EAS
11.6
T A = 25 °C
Avalanche energy, single pulse mJ 25 35 0.2 kV/µs 6 6 ±20 2 V W °C
I D = 2.9 A, V DD = 25 V, R GS = 25 Ω I D = -1.
BSO315C Datasheet
