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IPB082N10N3G - Power-Transistor

Infineon Technologies

The IPB082N10N3G by Infineon Technologies is a Power-Transistor. Below is the official datasheet preview.

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IPB082N10N3G Power-Transistor by Infineon Technologies - Datasheet Preview — Official preview page of the IPB082N10N3G Power-Transistor datasheet (Infineon Technologies).

Datasheet Details

Part number	IPB082N10N3G
Manufacturer	Infineon Technologies
File Size	542.90 KB
Description	Power-Transistor
Datasheet	IPB082N10N3G_InfineonTechnologies.pdf
Additional preview pages of the IPB082N10N3G datasheet.

IPB082N10N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Feb 20, 2012 |