Datasheet4U Logo Datasheet4U.com

IPB082N10N3G Datasheet Power-Transistor

Manufacturer: Infineon

📥 Download Datasheet

Overview

www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

More Datasheets from Infineon

Part Number Description
IPB080N06NG Power-Transistor
IPB081N06L3G Power-Transistor
IPB085N06LG Power-Transistor
IPB08CN10NG Power-Transistor
IPB08CNE8NG Power-Transistor
IPB009N03LG MOSFET
IPB011N04LG Power Transistor
IPB011N04NG OptiMOS3 Power Transistor
IPB014N06N Power Transistor
IPB015N04LG Power Transistor