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Infineon Technologies Electronic Components Datasheet

IPD75N04S4-06 Datasheet

Power-Transistor

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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD75N04S4-06
Product Summary
V DS
R DS(on),max
ID
40 V
5.9 m
75 A
PG-TO252-3-313
Type
IPD75N04S4-06
Package
Marking
PG-TO252-3-313 4N0406
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
75
53
300
72
75
±20
58
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2010-07-15


Infineon Technologies Electronic Components Datasheet

IPD75N04S4-06 Datasheet

Power-Transistor

No Preview Available !

IPD75N04S4-06
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 2.6 K/W
- - 62
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=26µA
I DSS
V DS=40V, V GS=0V,
T j=25°C
V DS=18V, V GS=0V,
T j=85°C2)
I GSS
V GS=20V, V DS=0V
R DS(on) V GS=10V, I D=75A
40 -
-V
2.0 3.0 4.0
- 0.015 1 µA
- 1 20
- - 100 nA
- 5.0 5.9 m
Rev. 1.1
page 2
2010-07-15


Part Number IPD75N04S4-06
Description Power-Transistor
Maker Infineon Technologies
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IPD75N04S4-06 Datasheet PDF






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