PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

Datasheet Details

Part number	PTFA181001E
Manufacturer	Infineon ↗ Technologies
File Size	418.90 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA181001E_InfineonTechnologies.pdf

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features.
Thermally-enhanced packages Broadband i.

📁 PTFA181001E Similar Datasheet

Other Datasheets by Infineon Technologies

Published: Jul 11, 2011 |