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Infineon Technologies Electronic Components Datasheet

PTFA181001E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTFA181001E
PTFA181001F
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
www.DataSheet4U.net
Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
DCS band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001E
Package H-36248-2
PTFA181001F
Package H-37248-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23 35
Efficiency
-28 30
-33 IM3
-38
25
20
-43 15
-48
-53
34
ACPR 10
36 38 40 42 44
Average Output Power (dBm)
5
46
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
• Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 45 W, ƒ = 1879.8 MHz
Characteristic
Symbol Min Typ Max Unit
Error Vector Magnitude
RMS EVM
1.8
%
Modulation Spectrum @ 400 KHz
ACPR
— –61
dBc
Modulation Spectrum @ 600 KHz
ACPR
— –73
dBc
Gain
Drain Efficiency
Gps
— 16.5
dB
ηD
— 36
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02.1, 2009-02-20


Infineon Technologies Electronic Components Datasheet

PTFA181001E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA181001E
PTFA181001F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
16
39
Typ
16.5
41
–30
Max
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, ID = 750 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.0
Typ
0.85
2.5
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 100 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
407
2.33
–40 to +150
0.43
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA181001E V4
PTFA181001F V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA181001E
PTFA181001F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 02.1, 2009-02-20


Part Number PTFA181001E
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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