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PTFA181001HL Datasheet

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFA181001HL datasheet preview

Datasheet Details

Part number PTFA181001HL
Datasheet PTFA181001HL PTFA181001GL Datasheet (PDF)
File Size 335.49 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA181001HL page 2 PTFA181001HL page 3

PTFA181001HL Overview

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.

PTFA181001HL Key Features

  • Thermally-enhanced, plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS pliant Broadband internal
  • Average output power = 45 W
  • Linear Gain = 16.5 dB
  • Efficiency = 36%
  • EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V
  • Output power at P-1dB = 120 W
  • Gain 15.5 dB
  • Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Capable of h
  • 35 -40 -45 -50 -55 34 36 38
  • 15 10 5
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