PTFA181001HL Datasheet | Infineon

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 - 1880 MHz ..net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL- Package PG-63248-2 PTFA181001HL- Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 m A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing -30 35 Features - Thermally-enhanced, plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and Ro HS pliant Broadband internal matching Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 d B - Efficiency = 36% - EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V - Output power at P- 1d B = 120 W - Gain 15.5 d B - Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power - - Drain Efficiency (%) IM3 (d Bc), ACPR (d Bc) -35 -40 -45 -50 -55 34 36 38 Efficiency IM3 30 25 20 ACPR - 15 10 5 - - - 40 Average Output Power (d...