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Infineon Technologies Electronic Components Datasheet

PTFA192001F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 1930 – 1990 MHz
www.DataSheet4U.net
Description
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA192001E
Package H-36260-2
PTFA192001F
Package H-37260-2
PTFA192001E
PTFA192001F
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-25 30
Efficiency
-30 25
IM3
-35 20
-40 15
-45 10
-50 ACPR 5
-55
34
36 38 40 42 44 46
Output Power, avg. (dBm)
0
48
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages
• Broadband internal matching
• Typical two-carrier WCDMA performance at 1990
MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 15.9 dB
- Efficiency = 27%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical single-carrier WCDMA performance at 1960
MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 48.5 dBm
- Linear Gain = 15.9 dB
- Efficiency = 34%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –40 dBc
• Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 57%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 05, 2008-05-15


Infineon Technologies Electronic Components Datasheet

PTFA192001F Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.8 A, POUT = 50 W average
ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Gps
15.3 15.9
Drain Efficiency
ηD 26.5 27 —
Intermodulation Distortion
IMD — –36 –34
Unit
dB
%
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
Gps — 15.9
ηD — 41
IMD — –30
Max
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.8 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 200 W CW)
Data Sheet
Symbol
VDSS
VGS
TJ
PD
2 of 11
TSTG
RθJC
Min Typ
65 —
——
——
— 0.05
2.0 2.5
——
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Value
65
–0.5 to +12
Unit
V
V
200 °C
625 W
3.57
–40 to +150
W/°C
°C
0.28 °C/W
Rev. 05, 2008-05-15


Part Number PTFA192001F
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon Technologies
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PTFA192001F Datasheet PDF






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