Datasheet Details
| Part number | PTFA192001F |
|---|---|
| Manufacturer | Infineon |
| File Size | 296.01 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA192001F Datasheet
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General Description
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Key Features
- include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30 Features.
- 25 Pb-free, RoHS-compliant and therma.