SIGC156T120R2C Datasheet | Infineon

.. IGBT Chip in NPT-technology Features : - 1200V NPT technology 200µm chip - low turn-off losses - short tail current - positive temperature coefficient - easy paralleling - integrated gate resistor This chip is used for: - power module BSM100GD120DN2 Applications: - drives Chip Type ICn Die Size 12.59 X 12.59 mm2 Package sawn on foil Ordering Code Q67041A4661-A003 SIGC156T120R2C 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink...