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Infineon Technologies Electronic Components Datasheet

BCR101T Datasheet

NPN Silicon Digital Transistor

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NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1 = 100k, R2 = 100k)
BCR101...
BCR101F/L3
BCR101T
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR101F*
BCR101L3*
BCR101T*
*Preliminary
Marking
UCs
1=B
UC 1=B
UCs
1=B
Pin Configuration
2=E 3=C -
-
2=E 3=C -
-
2=E 3=C -
-
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR101F, TS 128°C
BCR101L3, TS 135°C
BCR101T, TS 109°C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
1
Package
- TSFP-3
- TSLP-3-4
- SC75
Value
50
50
10
50
50
250
250
250
150
-65 ... 150
Unit
V
mA
mW
°C
Nov-27-2003


Infineon Technologies Electronic Components Datasheet

BCR101T Datasheet

NPN Silicon Digital Transistor

No Preview Available !

BCR101...
Thermal Resistance
Parameter
Junction - soldering point1)
BCR101F
BCR101L3
BCR101T
Symbol
RthJS
Value
90
60
165
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
-
-
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 50
-
-
IC = 10 µA, IE = 0
Collector-base cutoff current
I CBO
- - 100
VCB = 40 V, IE = 0
Emitter-base cutoff current
I EBO
- - 75
VEB = 10 V, IC = 0
DC current gain2)
hFE
70 -
-
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
VCEsat - - 0.3
IC = 5 mA, IB = 0.25 mA
Input off voltage
Vi(off)
0.5 - 1.8
IC = 100 µA, VCE = 5 V
Input on voltage
Vi(on)
1-3
IC = 1 mA, VCE = 0.3 V
Unit
V
nA
µA
-
V
Input resistor
Resistor ratio
R1
R1/R 2
70 100 130 k
0.9 1 1.1 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT - 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2 Nov-27-2003


Part Number BCR101T
Description NPN Silicon Digital Transistor
Maker Infineon Technologies AG
Total Page 6 Pages
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