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Infineon Technologies Electronic Components Datasheet

BCR116F Datasheet

NPN Silicon Digital Transistor

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NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=4.7k, R2=47k)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR116.../SEMH13
BCR116/F/L3
BCR116T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR116
BCR116F
BCR116L3
BCR116S
BCR116T
BCR116W
SEMH13
BCR116S
SEMH13
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07174
Marking
Pin Configuration
Package
WGs 1=B 2=E 3=C - - - SOT23
WGs 1=B 2=E 3=C - - - TSFP-3
WG 1=B 2=E 3=C - - - TSLP-3-4
WGs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WGs 1=B 2=E 3=C - - - SC75
WGs 1=B 2=E 3=C - - - SOT323
WG 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-17-2004


Infineon Technologies Electronic Components Datasheet

BCR116F Datasheet

NPN Silicon Digital Transistor

No Preview Available !

BCR116.../SEMH13
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR116, TS 102°C
BCR116F, TS 128°C
BCR116L3, TS 135°C
BCR116S, TS 115°C
BCR116T, TS 109°C
BCR116W, TS 124°C
SEMH13, TS 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR116
BCR116F
BCR116L3
BCR116S
BCR116T
BCR116W
SEMH13
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
5
15
100
200
250
250
250
250
250
250
150
-65 ... 150
Value
240
90
60
140
165
105
300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-17-2004


Part Number BCR116F
Description NPN Silicon Digital Transistor
Maker Infineon Technologies AG
Total Page 10 Pages
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