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Infineon Technologies Electronic Components Datasheet

BCR135W Datasheet

NPN Silicon Digital Transistor

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NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit
driver circuit
Built in bias resistor (R1=10k, R2=47k)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR135.../SEMH9
BCR135/F/L3
BCR135T/W
C
3
R1
R2
1
B
2
E
EHA07184
Type
BCR135
BCR135F
BCR135L3
BCR135S
BCR135T
BCR135W
SEMH9
BCR135S
SEMH9
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07174
Marking
Pin Configuration
Package
WJs 1=B 2=E 3=C - - - SOT23
WJs 1=B 2=E 3=C - - - TSFP-3
WJ 1=B 2=E 3=C - - - TSLP-3-4
WJs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WJs 1=B 2=E 3=C - - - SC75
WJs 1=B 2=E 3=C - - - SOT323
WJ 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 May-17-2004


Infineon Technologies Electronic Components Datasheet

BCR135W Datasheet

NPN Silicon Digital Transistor

No Preview Available !

BCR135.../SEMH9
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation
BCR135, TS 102°C
BCR135F, TS 128°C
BCR135L3, TS 135°C
BCR135S, TS 115°C
BCR135T, TS 109°C
BCR135W, TS 124°C
SEMH9, TS 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR135
BCR135F
BCR135L3
BCR135S
BCR135T
BCR135W
SEMH9
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
6
20
100
200
250
250
250
250
250
250
150
-65 ... 150
Value
240
90
60
140
165
105
300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 May-17-2004


Part Number BCR135W
Description NPN Silicon Digital Transistor
Maker Infineon Technologies AG
Total Page 10 Pages
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