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Infineon Technologies Electronic Components Datasheet

BCR198F Datasheet

PNP Silicon Digital Transistor

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PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1 = 47k, R2 = 47k)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR198.../SEMB2
BCR198/F/L3
BCR198T/W
C
3
R1
R2
1
B
2
E
EHA07183
Type
BCR198
BCR198F
BCR198L3
BCR198S
BCR198T
BCR198W
SEMB2
BCR198S
SEMB2
C1 B2 E2
654
R2
R1
TR1 R1
R2
TR2
123
E1 B1 C2
EHA07173
Marking
Pin Configuration
Package
WRs 1=B 2=E 3=C - - - SOT23
WRs 1=B 2=E 3=C - - - TSFP-3
WR 1=B 2=E 3=C - - - TSLP-3-4
WRs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
WRs 1=B 2=E 3=C - - - SC75
WRs 1=B 2=E 3=C - - - SOT323
WR 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1 Jun-16-2004


Infineon Technologies Electronic Components Datasheet

BCR198F Datasheet

PNP Silicon Digital Transistor

No Preview Available !

BCR198.../SEMB2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR198, TS 102°C
BCR198F, TS 128°C
BCR198L3, TS 135°C
BCR198S, TS 115°C
BCR198T, TS 109°C
BCR198W, TS 124°C
SEMB2, TS 75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BCR198
BCR198F
BCR198L3
BCR198S
BCR198T
BCR198W
SEMB2
Symbol
VCEO
VCBO
VEBO
Vi(on)
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
50
50
10
50
70
200
250
250
250
250
250
250
150
-65 ... 150
Value
240
90
60
140
165
124
300
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
2 Jun-16-2004


Part Number BCR198F
Description PNP Silicon Digital Transistor
Maker Infineon Technologies AG
Total Page 10 Pages
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