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Infineon Technologies Electronic Components Datasheet

BF770A Datasheet

NPN Silicon RF Transistor

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NPN Silicon RF Transistor
For IF amplifiers in TV-sat tuners
and for VCR modulators
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF770A
32
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF770A
Marking
Pin Configuration
LSs
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation2)
TS 63°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point3)
RthJS
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
3For calculation of RthJA please refer to Application Note Thermal Resistance
Value
12
20
20
2
90
9
300
150
-65 ... 150
-65 ... 150
Value
290
Unit
V
mA
mW
°C
Unit
K/W
1 2007-04-20


Infineon Technologies Electronic Components Datasheet

BF770A Datasheet

NPN Silicon RF Transistor

No Preview Available !

BF770A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain-
IC = 30 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 10 µA
hFE 70 100 140 -
2 2007-04-20


Part Number BF770A
Description NPN Silicon RF Transistor
Maker Infineon Technologies AG
Total Page 5 Pages
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