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Infineon Technologies Electronic Components Datasheet

BF771W Datasheet

NPN Silicon RF Transistor

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NPN Silicon RF Transistor
 For modulators and
amplifiers in TV and VCR tuners
BF771W
3
2
1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF771W
Marking
RBs
Pin Configuration
1=B
2=E
3=C
Package
SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  63 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
12
20
20
2
80
10
580
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point 2)
RthJS
 150
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Jun-27-2001


Infineon Technologies Electronic Components Datasheet

BF771W Datasheet

NPN Silicon RF Transistor

No Preview Available !

BF771W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 50 100 200 -
2 Jun-27-2001


Part Number BF771W
Description NPN Silicon RF Transistor
Maker Infineon Technologies AG
Total Page 3 Pages
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