BFS17P Datasheet - Infineon Technologies AG

NPN Silicon RF Transistor

* Maximum collector-emitter voltage VCE0 = 15 V

* Maximum collector current IC = 25 mA

* Noise figure NF = 3.5 dB

* 3rd order output intercept point OIP3 = 21.5 dBm

* 1 dB output compression point P-1dB = 10 dBm

* Transition frequency fT = 1.4 GHz

BFS17P

Infineon ↗ Technologies AG

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Npn silicon rf transistor.

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BFS17P NPN Silicon Transistor Infineon Technologies AG

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