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PTF180101 Datasheet, Infineon Technologies AG

PTF180101 Datasheet, Infineon Technologies AG

PTF180101

datasheet Download (Size : 310.60KB)

PTF180101 Datasheet

PTF180101 mhz equivalent, ldmos rf power field effect transistor 10 w/ 1805-1880 mhz/ 1930-1990 mhz 10 w/ 2110-2170 mhz.

PTF180101

datasheet Download (Size : 310.60KB)

PTF180101 Datasheet

Features and benefits


* Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W -.

Application

in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features
* Typical .

Description

The PTF180101 is a 10 W, internally
  –matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features
* Typical EDGE performance - A.

Image gallery

PTF180101 Page 1 PTF180101 Page 2 PTF180101 Page 3

TAGS

PTF180101
LDMOS
Power
Field
Effect
Transistor
1805-1880
MHz
1930-1990
MHz
2110-2170
MHz
Infineon Technologies AG

Manufacturer


Infineon (https://www.infineon.com/) Technologies AG

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