PTF180101 datasheet by Infineon.
| Part number | PTF180101 |
|---|---|
| Datasheet | PTF180101_InfineonTechnologiesAG.pdf |
| File Size | 310.60 KB |
| Manufacturer | Infineon |
| Description | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
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The PTF180101 is a 10 W, internally matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.
| Part Number | Description |
|---|---|
| PTF180101S | LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
| PTF180601 | LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
| PTF180601C | LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
| PTF180601E | LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz |
| PTF180901E | GSM/EDGE RF Power FET |
| PTF180901F | GSM/EDGE RF Power FET |
| PTF181301 | LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
| PTF181301A | LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
| PTF191601 | LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
| PTF191601E | LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
