ITBH09150B2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

ITBH09150B2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITBH09150B2
Manufacturer	Innogration
File Size	1.02 MB
Description	High Power RF LDMOS FET
Datasheet	ITBH09150B2 Datasheet

General Description

The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITBH09150B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITBH09150B Product Datasheet V2.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Rang.

More Datasheets from Innogration

Part Number	Description
ITBH09150B2E	High Power RF LDMOS FET
ITBH09200B2	High Power RF LDMOS FET
ITBH09200B2E	High Power RF LDMOS FET
ITBH09260B2	High Power RF LDMOS FET
ITBH09260B2E	High Power RF LDMOS FET