ITCH16045A2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH16045A Preliminary Datasheet V2.

ITCH16045A2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH16045A2
Manufacturer	Innogration
File Size	393.12 KB
Description	High Power RF LDMOS FET
Download	ITCH16045A2 Download (PDF)

General Description

The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

ITCH16045A2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 50 mA, CW.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 65 Vdc Gate.

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