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ITCH16045A2E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH16045A Preliminary Datasheet V2.

Download the ITCH16045A2E datasheet PDF. This datasheet also includes the ITCH16045A2 variant, as both parts are published together in a single manufacturer document.

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Datasheet Details

Part number ITCH16045A2E
Manufacturer Innogration
File Size 393.12 KB
Description High Power RF LDMOS FET
Download ITCH16045A2E Download (PDF)

General Description

The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

ITCH16045A2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 50 mA, CW.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 65 Vdc Gate.

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