ITCH16230B2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH16230B2 Preliminary Datasheet V1.

ITCH16230B2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH16230B2
Manufacturer	Innogration
File Size	785.36 KB
Description	High Power RF LDMOS FET
Download	ITCH16230B2 Download (PDF)

General Description

The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH16230B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case TC= 85C, TJ=200C, DC test.
Large Positive and Negative Gate.

More Datasheets from Innogration

Part Number	Description
ITCH16230B2E	High Power RF LDMOS FET
ITCH16045A2	High Power RF LDMOS FET
ITCH16045A2E	High Power RF LDMOS FET
ITCH16180B2	High Power RF LDMOS FET
ITCH16180B2E	High Power RF LDMOS FET
ITCH16180B4	High Power RF LDMOS FET
ITCH16180B4E	High Power RF LDMOS FET
ITCH15401D4	High Power RF LDMOS FET
ITCH18180B4	High Power RF LDMOS FET
ITCH18180B4E	High Power RF LDMOS FET