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ITCH18180B4E, ITCH18180B4 - High Power RF LDMOS FET

The ITCH18180B4E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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Official preview page of the ITCH18180B4E High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH18180B4E, ITCH18180B4
Manufacturer Innogration
File Size 954.89 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH18180B4-Innogration.pdf
Note This datasheet PDF includes multiple part numbers: ITCH18180B4E, ITCH18180B4.
Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH18180B4E datasheet.

ITCH18180B4E Product details

Description

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =450 mA, VGPEAK=0.8V, Pulse CW, Pulse Width=20 us, Duty cycle=10% .Freq P-1dB P-3dB D@P-3

Features

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