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ITCH18180B4 - High Power RF LDMOS FET

General Description

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Datasheet Details

Part number ITCH18180B4
Manufacturer Innogration
File Size 954.89 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH18180B4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Innogration (Suzhou) Co., Ltd. Document Number: ITCH18180B4 Preliminary Datasheet V1.0 1785MHz-1880MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH18180B4 Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =450 mA, VGPEAK=0.8V, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq P-1dB P-3dB D@P-3 Pavg=45dBm WCDMA Signal(1) (MHz) (dBm) (dBm) (%) Gp (dB) D (%) ACPR5M (dBc) 1785 51.0 52.6 58.7 14.6 44.2 -27.0 1795 51.3 52.