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ITCH18180B4E Datasheet

Manufacturer: Innogration

This datasheet includes multiple variants, all published together in a single manufacturer document.

ITCH18180B4E datasheet preview

Datasheet Details

Part number ITCH18180B4E
Datasheet ITCH18180B4E ITCH18180B4 Datasheet (PDF)
File Size 954.89 KB
Manufacturer Innogration
Description High Power RF LDMOS FET
ITCH18180B4E page 2 ITCH18180B4E page 3

ITCH18180B4E Overview

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH18180B4 Typical Performance of Doherty Demo (On Innogration fixture with device soldered):.

ITCH18180B4E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant
  • 10 to +10
  • 65 to +150
Innogration logo - Manufacturer

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