ITCH18180B4E - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	ITCH18180B4E
Manufacturer	Innogration
File Size	954.89 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH18180B4E Datasheet
Note	This datasheet PDF includes multiple part numbers: ITCH18180B4E, ITCH18180B4. Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH18180B4E datasheet.

Product details

Description

The ITCH18180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1785 to 1880 MHz. Typical Performance of Doherty Demo (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =450 mA, VGPEAK=0.8V, Pulse CW, Pulse Width=20 us, Duty cycle=10% .Freq P-1dB P-3dB D@P-3

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Published: Aug 5, 2018 |