ITCH20160B2E Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positiv
- Part: ITCH20160B2E
- Description: High Power RF LDMOS FET
- Manufacturer: Innogration
- Size: 882.30 KB
Related Innogration Datasheets
| Part Number | Description |
|---|---|
| ITCH20160B2 | High Power RF LDMOS FET |
| ITCH20120B2 | High Power RF LDMOS FET |
| ITCH20120B2E | High Power RF LDMOS FET |
| ITCH20180B2 | High Power RF LDMOS FET |
| ITCH20180B2E | High Power RF LDMOS FET |