ITCH20180B2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

ITCH20180B2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH20180B2
Manufacturer	Innogration
File Size	946.61 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH20180B2 Datasheet

General Description

The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH20180B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH20180B2 Preliminary Datasheet V1.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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