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ITCH20180B2E, ITCH20180B2 - High Power RF LDMOS FET

The ITCH20180B2E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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Official preview page of the ITCH20180B2E High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH20180B2E, ITCH20180B2
Manufacturer Innogration
File Size 946.61 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH20180B2-Innogration.pdf
Note This datasheet PDF includes multiple part numbers: ITCH20180B2E, ITCH20180B2.
Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH20180B2E datasheet.

ITCH20180B2E Product details

Description

The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D

Features

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