ITCH22160B4 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH22160B4 Preliminary Datasheet V1.0 2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs Descript.
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

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Datasheet Specifications

Part number: ITCH22160B4
Manufacturer: Innogration
File Size: 928.63 KB
Datasheet: ITCH22160B4-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table

Applications

* with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22160B4
* Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us,

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ITCH22160B4 High Power LDMOS FET Innogration

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