Datasheet Summary
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22160B4 Preliminary Datasheet V1.0
2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs
Description
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
- Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
ITCH22160B4E
Freq (MHz)
Gmax (dB)
P-1dB (dBm)
P-3dB (dBm)
D@P-3...