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ITCH22160B4E, ITCH22160B4 - High Power RF LDMOS FET

The ITCH22160B4E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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Official preview page of the ITCH22160B4E High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH22160B4E, ITCH22160B4
Manufacturer Innogration
File Size 928.63 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22160B4-Innogration.pdf
Note This datasheet PDF includes multiple part numbers: ITCH22160B4E, ITCH22160B4.
Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH22160B4E datasheet.

ITCH22160B4E Product details

Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .

Features

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