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ITCH22160B4E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Download the ITCH22160B4E datasheet PDF. This datasheet also includes the ITCH22160B4 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (ITCH22160B4-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITCH22160B4E
Manufacturer Innogration
File Size 928.63 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22160B4E Datasheet

General Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH22160B4 Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH22160B4 Preliminary Datasheet V1.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc 1/6 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.

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