• Part: ITCH22160B4E
  • Description: High Power RF LDMOS FET
  • Manufacturer: Innogration
  • Size: 928.63 KB
Download ITCH22160B4E Datasheet PDF
ITCH22160B4E page 2
Page 2
ITCH22160B4E page 3
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ITCH22160B4E Key Features

  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drift
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
  • Pb-free, RoHS-pliant
  • 10 to +10
  • 65 to +150