Datasheet4U Logo Datasheet4U.com

ITCH27100B2 - High Power RF LDMOS FET

The ITCH27100B2 by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the ITCH27100B2 High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH27100B2
Manufacturer Innogration
File Size 921.46 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH27100B2-Innogration.pdf
Additional preview pages of the ITCH27100B2 datasheet.

ITCH27100B2 Product details

Description

The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) 

Features

📁 ITCH27100B2 Similar Datasheet

  • ITC008 - Technical Traing Manual (Thomson)
  • ITC1000 - Pulsed Avionics (GHz Technology)
  • ITC1100 - Common base bipolar transistor (GHz Technology)
  • ITC117 - Integrated Telecom Circuits (Clare Inc.)
  • ITC117P - Integrated Telecom Circuits (Clare Inc.)
  • ITC117PL - Integrated Telecom Circuits (IXYS)
  • ITC135P - Integrated Telecom Circuits (Clare Inc.)
  • ITC137P - Integrated Telecom Circuits (Clare Inc.)
Other Datasheets by Innogration
Published: |