ITCH27100B2 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

ITCH27100B2 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH27100B2
Manufacturer	Innogration
File Size	921.46 KB
Description	High Power RF LDMOS FET
Download	ITCH27100B2 Download (PDF)

General Description

The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH27100B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH27100B2 Preliminary Datasheet V1.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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