Datasheet Details
| Part number | ITCH27015E2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 859.30 KB |
| Description | RF Power LDMOS FET |
| Download | ITCH27015E2 Download (PDF) |
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Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH27015E2 Preliminary Datasheet V2.
| Part number | ITCH27015E2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 859.30 KB |
| Description | RF Power LDMOS FET |
| Download | ITCH27015E2 Download (PDF) |
|
|
|
The ITCH27015E2 is a 15-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 2700 MHz ITCH27015E2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =10us, Duty Cycle =12%.
Frequency P_1dB η D P_3dB η D Gp (dB) (MHz) (dBm) (%) (dBm) (%) 2620 19.8 42.5 56 43.5 59 2655 20 42 56 43.3 60 2690 19.9 41.6 55 42.9 61 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA，Pulse Width =50us, Duty Cycle =20%.
Frequency P_1dB η D P_3dB η D Gp (dB) (MHz) (dBm) (%) (dBm) (%) 2400 19.4 43.0 57 44.0 61 2450 19.7 42.3 57 43.5 62 2500 19.9 41.7 57 42.8 61 Highlight: The fixture is used same board different BOM.
| Part Number | Description |
|---|---|
| ITCH27100B2 | High Power RF LDMOS FET |
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| ITCH20120B2 | High Power RF LDMOS FET |
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| ITCH20160B2 | High Power RF LDMOS FET |
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| ITCH20180B2 | High Power RF LDMOS FET |
| ITCH20180B2E | High Power RF LDMOS FET |
| ITCH20210B2 | High Power RF LDMOS FET |
| ITCH20210B2E | High Power RF LDMOS FET |