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MK0560VPX - High Power RF LDMOS FET

Description

The MK0560VPX is a 600-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.5 GHz.

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.

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Datasheet preview – MK0560VPX

Datasheet Details

Part number MK0560VPX
Manufacturer Innogration
File Size 745.01 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MK0560VPX Datasheet
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Full PDF Text Transcription

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MK0560VPX LDMOS TRANSISTOR Document Number: MK0560VPX Preliminary Datasheet V1.0 600W, 50V High Power RF LDMOS FETs Description The MK0560VPX is a 600-watt capable, high performance, unmatched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies HF to 0.5 GHz. It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as FM radio, VHF TV and Aerospace applications. MK0560VPX  Typical performance(on 1.6-30MHz wideband test board with device soldered) Signal:pulse CW, pulse width:100us,duty cycle:10%,Vgs=3.25V,Vds=50V,Idq=100mA Freq(MHz) Pin(dBm) Psat(dBm) Psat(W) IDS(A) Gain(dB) η(%) 1.6 29 56.8 479 1.63 27.8 62 5 27 56.9 490 1.488 29.9 70 10 26.6 56.7 468 1.436 30.
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