MQ1090VP Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: MQ1090VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs.

MQ1090VP high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MQ1090VP
Manufacturer	Innogration
File Size	536.05 KB
Description	High Power RF LDMOS FET
Download	MQ1090VP Download (PDF)

General Description

The MQ1090VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band avionics applications with frequencies 1030/1090MHz.

Document Number: MQ1090VP Preliminary Datasheet V1.0 MQ1090VP  Typical Avionics Performance (on innogration narrow band test fixture with device soldered): Frequency:1030MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us 14.5 1100 duty cycle 10% 56 pulse width 50us duty cycle 1% 14 1200 56.5

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Vol.

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