MQ1090VP Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

MQ1090VP high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MQ1090VP
Manufacturer	Innogration
File Size	536.05 KB
Description	High Power RF LDMOS FET
Download	MQ1090VP Download (PDF)

General Description

The MQ1090VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band avionics applications with frequencies 1030/1090MHz.

Document Number: MQ1090VP Preliminary Datasheet V1.0 MQ1090VP  Typical Avionics Performance (on innogration narrow band test fixture with device soldered): Frequency:1030MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us 14.5 1100 duty cycle 10% 56 pulse width 50us duty cycle 1% 14 1200 56.5

Overview

MQ1090VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Vol.

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