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INN150FQ032A Datasheet, Innoscience

INN150FQ032A transistor equivalent, 150v enhancement-mode gan power transistor.

INN150FQ032A Avg. rating / M : 1.0 rating-110

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INN150FQ032A Datasheet

Features and benefits

 GaN-on-Silicon E-mode HEMT technology  Industry Application  Very low gate charge  Ultra-low on resistance  Very small footprint 12 11 10 9 8 7 6 31 20 21 22 23.

Application

 High frequency DC-DC converter  Solar Systems optimizers and microinverters  PD Charger and PSU Synchronous Rectifi.

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