150V Datasheet | Specifications & PDF Download

10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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Silan Microelectronics SD4938_Datasheet 150V CURRENT MODE PWM CONTROLLER DESCRIPTION SD4938 is a current mode PWM controller with 150V MOSFET used

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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FQA36P15 QFET FQA36P15 150V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F

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SBD20C150T/F/S_Datasheet 20A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD20C150T/F/S is schottky rectifier fabricated in silicon epitaxial planar

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AD20S150 150V 20A Ultra Low VF Schottky Characteristics Summary Characteristics Values IF(AV) 20 VRRM VF @ 5A, TJ = 25℃ VF @ 10A, TJ = 25℃ TJ O

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AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance pack

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BUP15CN027E-01 150V Radiation Tolerant power MOSFET BUP15CN027E-01 Features • Low RDS(on) • Single Event Effect (SEE) tolerant • Total Ionisation Dos

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LTC7000/LTC7000-1 Fast 150V Protected High Side NMOS Static Switch Driver FEATURES n Wide Operating VIN: 3.5V to 135V (150V Abs Max) n 1Ω Pull-Down,

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Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compl

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AOB66518L 150V N-Channel MOSFET General Description • Trench Power MOSFET technology • Combined of low RDS(ON) and wide safe operatiing area (SOA) •

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AP300N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP300N15TLG1 uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low ga

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UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it use

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AON7254 150V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimi

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6MBI150VX-120-50 IGBT MODULE (V series) 1200V / 150A / 6 in one package IGBT Modules Features Compact Package P.C.Board Mount Low VCE (sat) Applica

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Public IQD063N15NM5CGSC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on

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FSV15150V Ultra-Low VF Schottky Rectifier, 15 A, 150 V Features • Ultra−Low Forward Voltage Drop • Low Thermal Resistance • Very Low Profile: Typica

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ST95P04 SERIAL ACCESS SPI BUS 4K (512 x 8) EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE 3V to 5.5V SUPPLY VO

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