150V Datasheet | Specifications & PDF Download


 


 
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AOB66518L 150V N-Channel MOSFET General Description • Trench Power MOSFET technology • Combined of low RDS(ON) and wide safe operatiing area (SOA) •

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UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it use

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FSV15150V Ultra-Low VF Schottky Rectifier, 15 A, 150 V Features • Ultra−Low Forward Voltage Drop • Low Thermal Resistance • Very Low Profile: Typica

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FQA28N15 — N-Channel QFET® MOSFET FQA28N15 N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 Description Features This N-Channel enhancement mo

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FQA36P15 QFET FQA36P15 150V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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http://www.fujielectric.com/products/semiconductor/ 6MBP150VDA060-50 IGBT Modules IGBT MODULE (V series) 600V / 150A / IPM Features • Temperature

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ALPHA & OMEGA SEMICONDUCTOR AOK150V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with lo

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AOTL66515 150V N-Channel AlphaSGT TM General Description Product Summary • Trench Power MOSFET technology • Combined of low RDS(ON) and wide Safe O

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FSV15150V — 15 A, 150 V Ultra-Low VF Schottky Rectifier July 2015 FSV15150V 15 A, 150 V Ultra-Low VF Schottky Rectifier Features • Ultra-Low Forwar

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LTC7000/LTC7000-1 Fast 150V Protected High Side NMOS Static Switch Driver FEATURES n Wide Operating VIN: 3.5V to 135V (150V Abs Max) n 1Ω Pull-Down,

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LTC7000/LTC7000-1 Fast 150V Protected High Side NMOS Static Switch Driver FEATURES n Wide Operating VIN: 3.5V to 135V (150V Abs Max) n 1Ω Pull-Down,

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ADVA NECEWDPNIRENOFWDOPURRCMOTADTIUCOTN Green DMN15H310SK3 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 150V RDS(ON) max 310mΩ

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Features  BVCEO > 150V  IC = 5A High Continuous Collector Current  ICM = 10A Peak Pulse Current  Very Low Saturation Voltage VCE(SAT) < 110mV @ 1A

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FDD2512 August 2001 FDD2512 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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FDD2570 February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

Rating: 1 ★ (4 votes)