150V Datasheet | Specifications & PDF Download

Silan Microelectronics SD4938_Datasheet 150V CURRENT MODE PWM CONTROLLER DESCRIPTION SD4938 is a current mode PWM controller with 150V MOSFET used

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SD4947 150VDC-DC 1. SD4947 buck ， MOSFET DC-DC 。 SD4947 ，，， 。， EMI。 SD4947 ，： ，VDD 、，，， 。 SOP-8-225-1.27 2.  20V 150V       VDD

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench® MOSFET 150 V, 50

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FDB0630N1507L N-Channel PowerTrench® MOSFET September 2016 FDB0630N1507L N-Channel PowerTrench® MOSFET 150 V, 130 A, 6.4 mΩ Features General Descr

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Silan Microelectronics SVGP157R2NS_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R2NS is an N-channel enhancement mode power MOS field e

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MOSFET – N-Channel, POWERTRENCH) 150 V, 37 A, 36 mW FDP2552, FDB2552 Features • RDS(on) = 32 mW (Typ.), VGS = 10 V, ID = 16 A • Qg(tot) = 39 nC (Typ.

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HGW105N15SL P-1 Feature ◇ High Speed Power Smooth Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 10

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SPTP15R7D5 150V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=4.95mΩ@VGS=10V  Low Gate Charge Minimize Switch

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DOC NO.: 24053061 Issued Date: Jun. 24, 2005 Model No.: V150V1-T01 Approval TFT LCD Approved Specification MODEL NO.: V150V1 - T01 Customer: Approv

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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6MBI150VB-060-50 IGBT MODULE (V series) 600V / 150A / 6 in one package IGBT Modules Features Compact Package P.C.Board Mount Low VCE (sat) Applicat

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AD20S150 150V 20A Ultra Low VF Schottky Characteristics Summary Characteristics Values IF(AV) 20 VRRM VF @ 5A, TJ = 25℃ VF @ 10A, TJ = 25℃ TJ O

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http://www.fujielectric.com/products/semiconductor/ 7MBR150VZ060-50 IGBT Modules IGBT MODULE (V series) 600V / 150A / PIM Features Low VCE(sat) Co

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Silan Microelectronics SVGP157R5NT(P7)_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R5NT(P7) is an N-channel enhancement mode power MOS

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MOSFET – N-Channel, POWERTRENCH) 150 V, 37 A, 36 mW FDP2552, FDB2552 Features • RDS(on) = 32 mW (Typ.), VGS = 10 V, ID = 16 A • Qg(tot) = 39 nC (Typ.

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LMNDS04N15 Rev. 1.0 LMNDS04N15 150V N-Channel MOSFET Features ● 150V,4A, RDS(ON) =65mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● Gree

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150V, 100A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGP157R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it use

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