INN650D150A Datasheet | Innoscience

description 650V Ga N-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  Ro HS, Pb-free, REACH-pliant 3. Applications  AC-DC converters  DC-DC converters  Totem pole PFC  Fast battery charging  High density power conversion  High efficiency power conversion S S SK G 4. Key performance parameters Table 1 Key performance parameters at Tj = 25 °C Parameter Value VDS,max RDS(on),max @ VGS = 6 V QG,ty p @ VDS = 400 V ID,pulse QOSS @ VDS = 400 V Qrr @ VDS = 400 V Unit V mΩ n C A n C n C 5. Pin information Table 2 Gate 8 Pin information Drain 1,2,3,4 Kelvin Source 7 Source 5,6 Table 3 Ordering information Type/Ordering Code Package DFN 8X8 Marking (Product Code) INN65D150A Page...