INN650DA260A - 650V GaN Enhancement-mode Power Transistor

General Description

Key Features

 Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial.

INN650DA260A 650v gan enhancement-mode power transistor by Innoscience - Datasheet Preview

Datasheet Details

Part number	INN650DA260A
Manufacturer	Innoscience
File Size	858.18 KB
Description	650V GaN Enhancement-mode Power Transistor
Datasheet	INN650DA260A Datasheet

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INN650DA260A 650V GaN Enhancement-mode Power Transistor INN650DA260A 1. General description 650V GaN-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant DD D D DD D D 1 3. Applications  AC-DC converters  DC-DC converters  Totem pole PFC  Fast battery charging  High density power conversion  High efficiency power conversion S S SK G 8 4.