INN650DA260A Datasheet | Innoscience

650V GaN Enhancement-mode Power Transistor 1. General description 650V GaN-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for industrial applications according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-pliant DD D D DD D D 3. Applications  AC-DC converters  DC-DC converters  Totem pole PFC  Fast battery charging  High density power conversion  High efficiency power conversion S S SK G 4. Key...