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IDT71V256SA Datasheet

LOW POWER 3.3V CMOS FAST SRAM 256K

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Lower Power
3.3V CMOS Fast SRAM
256K (32K x 8-Bit)
IDT71V256SA
Features
Ideal for high-performance processor secondary cache
Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)
temperature range options
Fast access times:
– Commercial and Industrial: 12/15/20ns
Low standby current (maximum):
– 2mA full standby
Small packages for space-efficient layouts:
– 28-pin 300 mil SOJ
– 28-pin TSOP Type I
Produced with advanced high-performance CMOS
technology
Inputs and outputs are LVTTL-compatible
Single 3.3V(±0.3V) power supply
Green parts available, see ordering information
Description
The IDT71V256SA is a 262,144-bit high-speed static RAM orga-
nized as 32K x 8. It is fabricated using a high-performance, high-reliability
CMOS technology.
The IDT71V256SA has outstanding low power characteristics while
at the same time maintaining very high performance. Address access
times of as fast as 12ns are ideal for 3.3V secondary cache in 3.3V
desktop designs.
When power management logic puts the IDT71V256SA in standby
mode, its very low power characteristics contribute to extended battery life.
By taking CS HIGH, the SRAM will automatically go to a low power standby
mode and will remain in standby as long as CS remains HIGH. Further-
more, under full standby mode (CS at CMOS level, f=0), power consump-
tion is guaranteed to always be less than 6.6mW and typically will be much
smaller.
The IDT71V256SA is packaged in a 28-pin 300 mil SOJ and a 28-pin
300 mil TSOP Type I.
Functional Block Diagram
A0
A14
I/O0
I/O7
CS
OE
WE
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
262,144 BIT
MEMORY ARRAY
I/O CONTROL
VCC
GND
,
3101 drw 01
©2015 Integrated Device Technology, Inc.
1
AUGUST 2015
DSC-3101/11


Integrated Device Technology Electronic Components Datasheet

IDT71V256SA Datasheet

LOW POWER 3.3V CMOS FAST SRAM 256K

No Preview Available !

IDT71V256SA
3.3V CMOS Static RAM 256K (32K x 8-Bit)
Pin Configurations
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I /O0
I /O1
I /O2
GND
1
2
3
4
5
6
7 SO28
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V CC
WE
A13
A8
A9
A11
OE
A10
CS
I /O7
I /O6
I /O5
I /O4
I /O3
DIP/SOJ 3101 drw 02
Top View
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
SO28
TSOP
Top View
21 A10
20 CS
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
14 GND
13 I/O2
12 I/O1
11 I/O0
10 A0
9 A1
8 A2
3101 drw 03
Pin Descriptions
Name
A0 - A14
I/O0 - I/O7
CS
WE
OE
GND
VCC
Description
Addresses
Data Input/Output
Chip Select
Write Enable
Output Enable
Ground
Power
3101 tbl 01
Commercial and Industrial Temperature Ranges
Truth Table(1)
WE CS OE
I/O
Function
X H X High-Z Standby (ISB)
X VHC X High-Z Standby (ISB1)
H L H High-Z Output Disable
H L L DOUT Read
L L X DIN Write
NOTE:
1. H = VIH, L = VIL, X = Don’t Care
3101 tbl 02
Absolute Maximum Ratings(1)
Symbol
Rating
Com'l.
Unit
VCC Supply Voltage
Relative to GND
-0.5 to +4.6
V
VTERM(2)
Terminal Voltage
Relative to GND
-0.5 to VCC+0.5 V
TBIAS
Temperature Under Bias
-55 to +125
oC
TSTG Storage Temperature
-55 to +125
oC
PT Power Dissipation
1.0 W
IOUT DC Output Current
50 mA
NOTES:
3101 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. Input, Output, and I/O terminals; 4.6V maximum.
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
Parameter(1)
Conditions Max.
Unit
CIN Input Capacitance
VIN = 3dV
6 pF
COUT
Output Capacitance
VOUT = 3dV
7 pF
NOTE:
3101 tbl 04
1. This parameter is determined by device characterization, but is not production
tested.
Recommended Operating
Temperature and Supply Voltage
Grade
Temperature
GND
Vcc
Commercial
0OC to +70OC
0V
3.3V ± 0.3V
Industrial
-40OC to +85OC
0V
3.3V ± 0.3V
3101 tbl 05
2


Part Number IDT71V256SA
Description LOW POWER 3.3V CMOS FAST SRAM 256K
Maker Integrated Device Technology
Total Page 8 Pages
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