Datasheet Details
| Part number | IS41LV8200 |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 203.69 KB |
| Description | 2M x 8 (16-MBIT) DYNAMIC RAM |
| Download | IS41LV8200 Download (PDF) |
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Overview: IS41C8200 IS41LV8200 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.
Download the IS41LV8200 datasheet PDF. This datasheet also includes the IS41C8200 variant, as both parts are published together in a single manufacturer document.
| Part number | IS41LV8200 |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 203.69 KB |
| Description | 2M x 8 (16-MBIT) DYNAMIC RAM |
| Download | IS41LV8200 Download (PDF) |
|
|
|
® JUNE 2001 • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: -- 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory.
These devices offer an accelarated cycle access called EDO Page Mode.
EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
| Part Number | Description |
|---|---|
| IS41LV8200A | 2M x 8 (16-MBIT) DYNAMIC RAM |
| IS41LV8205 | 2M x 8 (16-MBIT) DYNAMIC RAM |
| IS41LV8205A | 2M x 8 (16-MBIT) DYNAMIC RAM |
| IS41LV85120 | 512K x 8 (4-MBIT) DYNAMIC RAM |
| IS41LV85120A | 512K x 8 (4-MBIT) DYNAMIC RAM |
| IS41LV85125 | 512K x 8 (4-MBIT) DYNAMIC RAM |
| IS41LV85125A | 512K x 8 (4-MBIT) DYNAMIC RAM |
| IS41LV16100 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100A | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16100B | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |